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BTA208X-1000C high commutation three-quadrant triacs rev. 02 ? 4 september 2009 product data sheet 1. product profile 1.1 general description passivated high voltage, high commutation tria c in a full pack, plastic package. this triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dv/dt as well as high dicom/dt ca n occur. this device will commutate the full rated rms current at the maximum rated junction temperature without the aid of a snubber. 1.2 features and benefits ? 3q technology with superior commutation performance for improved noise immunity ? high false trigger immunity ? isolated package ? very high blocking voltage capability of 1000 v 1.3 applications ? general purpose motor control ? reversible induction motor control 1.4 quick reference data table 1. quick reference symbol parameter conditions min typ max unit v drm repetitive peak off-state voltage - - 1000 v i tsm non-repetitive peak on-state current full sine wave; t j(init) =25c; t p =20ms; see figure 4 and 5 --65a i t(rms) rms on-state current full sine wave; t h 73 c; see figure 3 , 1 and 2 --8a static characteristics i gt gate trigger current v d =12v; i t = 0.1 a; t2+ g+; t j =25c; see figure 7 2635ma v d =12v; i t = 0.1 a; t2+ g-; t j =25c; see figure 7 2 1335ma v d =12v; i t = 0.1 a; t2- g-; t j =25c; see figure 7 2 2335ma
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 2 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs 2. pinning information 3. ordering information 4. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1 t1 main terminal 1 s o t 1 8 6 a (to-220f) 2 t2 main terminal 2 3g gate mb n.c. mounting base; isolated 3 2 1 mb s ym051 t1 g t2 table 3. ordering information type number package name description version BTA208X-1000C to-220f plastic single-ended pa ckage; isolated heatsink mounted; 1 mounting hole; 3-lead to-220 "full pack" sot186a table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage -1000v i t(rms) rms on-state current full sine wave; t h 73 c; see figure 3 , 1 and 2 -8a i tsm non-repetitive peak on-state current full sine wave; t j(init) =25c; t p =20ms; see figure 4 and 5 -65a full sine wave; t j(init) =25c; t p =16.7ms - 71 a i 2 ti 2 t for fusing t p = 10 ms; sine-wave pulse - 21 a 2 s di t /dt rate of rise of on-state current i t =12a; i g = 0.2 a; di g /dt = 0.2 a/s - 100 a/s i gm peak gate current - 2 a p gm peak gate power - 5 w p g(av) average gate power - 0.5 w t stg storage temperature -40 150 c t j junction temperature - 125 c
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 3 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs fig 1. rms on-state current as a function of surge duration; maximum values fig 2. rms on-state current as a function of heatsink temperature; maximum values fig 3. total power dissipation as a function of rms on-state cu rrent; maximum values 0 5 10 15 20 25 surge duration (s) 10 ? 2 10 1 10 ? 1 003aaa970 i t(rms) (a) t h ( c) ? 50 150 100 050 003aaa969 4 6 2 8 10 i t(rms) 0 73 c (a) 003aaa967 4 8 12 p tot 0 i t(rms) (a) 0 10 8 46 2 2 6 10 (w) 71 80 89 107 116 125 98 t h(max) ( c) = 180 120 90 60 30 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 4 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs fig 4. non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values fig 5. non-repetitive peak on-state current as a function of pulse width; maximum values 003aaa968 40 20 60 80 i tsm 0 number of cycles 1 10 3 10 2 10 (a) i tsm t i t t j(init) = 25 c max t 003aab121 t p (ms) 10 ? 2 10 2 10 10 ? 1 1 10 2 10 3 i tsm (a) 10 (1) i tsm t i t t j(init) = 25 c max t p
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 5 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs 5. thermal characteristics 6. isolation characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-h) thermal resistance from junction to heatsink full cycle or half cycle with heatsink compound; see figure 6 --4.5k/w full cycle or half cycle without heatsink compound; see figure 6 --6.5k/w r th(j-a) thermal resistance from junction to ambient -55-k/w fig 6. transient thermal impedance from junction to heatsink as a function of pulse width 003aaa972 t p (s) 10 ? 5 110 10 ? 1 10 ? 2 10 ? 4 10 ? 3 1 10 ? 1 10 z th(j-h) 10 ? 2 (k/w) (1) (2) (3) (4) t p p t table 6. isolation characteristics symbol parameter conditions min typ max unit v isol(rms) rms isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 hz f 60 hz; rh 65 %; t h =25c --2500v c isol isolation capacitance from main terminal 2 to external heatsink; f=1mhz; t h =25c -10-pf
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 6 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i gt gate trigger current v d =12v; i t = 0.1 a; t2+ g+; t j =25c; see figure 7 2635ma v d =12v; i t = 0.1 a; t2+ g-; t j =25c; see figure 7 21335ma v d =12v; i t = 0.1 a; t2- g-; t j =25c; see figure 7 22335ma i l latching current v d =12v; i g = 0.1 a; t2+ g+; t j =25c; see figure 8 -2550ma v d =12v; i g = 0.1 a; t2+ g-; t j =25c; see figure 8 -4875ma v d =12v; i g = 0.1 a; t2- g-; t j =25c; see figure 8 -3050ma i h holding current v d =12v; t j =25c; see figure 9 -2050ma v t on-state voltage i t =10a; t j = 25 c; see figure 10 - 1.3 1.65 v v gt gate trigger voltage v d =12v; i t = 0.1 a; t j =25c; see figure 11 -0.71.5v v d =400v; i t = 0.1 a; t j = 125 c 0.25 0.4 - v i d off-state current v d = 1000 v; t j =125c - 0.1 0.5 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v dm =670v; t j = 125 c; exponential waveform; gate open circuit 1000 4000 - v/s di com /dt rate of change of commutating current v d =400v; t j = 125 c; i t(rms) =8a; dv com /dt = 20 v/s; gate open circuit; see figure 12 12 32 - a/ms t gt gate-controlled turn-on time i tm =12a; v d = 1000 v; i g =0.1a; di g /dt = 5 a/s -2-s
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 7 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs fig 7. normalized gate trigger current as a function of junction temperature fig 8. normalized latching current as a function of junction temperature fig 9. normalized holding current as a function of junction temperature fig 10. on-state current as a function of on-state voltage t j ( c) ? 50 150 100 050 003aac888 1 2 3 0 (1) (2) (3) i gt i gt(25 c) t j ( c) ? 50 150 100 050 001aab100 1 2 3 0 i l i l(25 c) t j ( c) ? 50 150 100 050 001aab099 1 2 3 0 i h i h(25 c) 003aaa971 v t (v) 03 2 1 10 15 5 20 25 i t (a) 0 (1) (2) (3)
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 8 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs fig 11. normalized gate trigger voltage as a function of junction temperature fig 12. rate of change of commutating current as a function of junction temperature; typical and minimum values t j ( c) ? 50 150 100 050 001aab101 0.8 1.2 1.6 0.4 v gt v gt(25 c) 003aaa973 t j ( c) 20 140 100 60 10 2 10 10 3 di com /dt 1 (a/ms) typ min
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 9 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs 8. package outline fig 13. package outline sot186a (to-220f) references outline version european projection issue date iec jedec jeita sot186a 3-lead to-220f 0 5 10 mm scale plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead to-220 'full pack' sot186 a a a 1 q c k j notes 1. terminal dimensions within this zone are uncontrolled. 2. both recesses are ? 2.5 0.8 max. depth d d 1 l l 2 l 1 b 1 b 2 e 1 e b w m 1 23 q e p t unit d b 1 d 1 e q q p l c l 2 (1) max. e 1 a 5.08 3 mm 4.6 4.0 a 1 2.9 2.5 b 0.9 0.7 1.1 0.9 b 2 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 e 10.3 9.7 2.54 14.4 13.5 t (2) 2.5 0.4 l 1 3.30 2.79 j 2.7 1.7 k 0.6 0.4 2.6 2.3 3.0 2.6 w 3.2 3.0 dimensions (mm are the original dimensions) 02-04-09 06-02-14 mounting base
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 10 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs 9. revision history table 8. revision history document id release date data sheet status change notice supersedes BTA208X-1000C_2 20090904 product data sheet - BTA208X-1000C_1 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. BTA208X-1000C_1 20051004 product data sheet - -
BTA208X-1000C_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 ? 4 september 2009 11 of 12 nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 10.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 10.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 11. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
nxp semiconductors BTA208X-1000C high commutation three-quadrant triacs ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 4 september 2009 document identifier: BTA208X-1000C_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 12. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 isolation characteristics . . . . . . . . . . . . . . . . . . .5 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . .10

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